View PTFA071701E_4963307.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 - 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E* Package H-36248-2
PTFA071701F* Package H-37248-2
Two-tone Drive-up
VDD = 30 V, IDQ = 900 mA, = 765 MHz, tone spacing = 1 MHz
-20 60 55
Features
* * *
Drain Efficiency (%)
Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = -50 dBc Typical CW performance, 770 MHz, 30 V - Output power at P-1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power
Intermodulation Distortion (dBc)
-25 -30 -35 -40 -45 -50 -55 -60 -65 44 46 48 50 52 54
IM3 IM5 Efficiency
50 45 40 35 30 25
*
* * *
IM7
20 15
Output Power, PEP (dBm)
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average, 1 = 760, 2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF
Characteristic
Gain Drain Efficiency Adjacent Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated
Symbol
Gps
Min
-- -- --
Typ
18.5 32 -36
Max
-- -- --
Unit
dB % dBc
D
ACPR
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 9 Rev. 03, 2009-11-11
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 0.9 A, POUT = 150 W PEP, = 765 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
18.0 44 --
Typ
18.7 46 -29.5
Max
-- -- -28
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 30 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.07 2.48 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.0 A VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 170 W CW)
Symbol
VDSS VGS TJ TSTG RJC
Value
65 -0.5 to +12 200 -40 to +150 0.38
Unit
V V C C C/W
Ordering Information
Type and Version
PTFA071701E V4 PTFA071701E V4 R250 PTFA071701F V4 PTFA071701F V4 R250
Package Type
H-36248-2 H-36248-2 H-37248-2 H-37248-2
Package Description
Slotted flange, single-ended Slotted flange, single-ended Earless flange, single-ended Earless flange, single-ended
Shipping
Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs
*See Infineon distributor for future availability. Data Sheet 2 of 9 Rev. 03, 2009-11-11
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 0.9 A, = 770 MHz
21 20 19 65 55
50
Broadband Performance
VDD = 30 V, IDQ = 900 mA, POUT = 75 W
0 -5 -10 -15
Gain (dB), Efficiency (%)
45
Gain (dB)
Gain
45 35 25
40 35
18 17 16 15 30 35 40 45 50 55
Return Loss
30 25 20 15 700 -20 -25
Efficiency
15 5
Gain
-30 -35 790
730
760
Output Power (dBm)
Frequency (MHz)
CW Performance at Selected Voltages
IDQ = 0.9 A, = 770 MHz
64 60 21
21 20
Power Sweep
VDD = 30 V, = 770 MHz
Gain
20
IDQ = 1.3 A IDQ = 1.1 A
Drain Efficiency (%)
Power Gain (dB)
56 52 48 44 40 V DD = 32 V V DD = 30 V V DD = 28 V 51 52 53
19 18 17 16 15 14 48 49 50
19 18 17
Gain (dB)
IDQ = 0.9 A
16 15 30 35 40 45 50 55
IDQ = 0.7 A
Efficiency
36
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 03, 2009-11-11
Input Return Loss (dB)
Drain Efficiency (%)
Efficiency
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1.0 A, = 765 MHz
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
-25
70 60
1.03
1.556 A 3.1 A 6.22 A
TCASE = 25C TCASE = 90C IM3
Normalized Bias Voltage (V)
-30 -35
1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20
Drain Efficiency (%)
50 40 30 20 10 0 32 34 36 38 40
ACPR (dBc)
7.76 A 9.32 A 10.88 A 12.44 A 14 A
-40 -45
ACPR Efficiency
42 44 46 48
-50 -55 -60
0
20
40
60
80
100
Output Power (dBm)
Case Temperature (C)
- WAVE LE NGTH S T OW A
Broadband Circuit Impedance
R
Z0 = 50
D
Z Source
Z Load
0.0
0.1
G S
Z Load
725 MHz
0.1
TOW ARD LOAD GT HS
770 MHz
Z Source
725 736 748 759 770
2.690 2.680 2.700 2.720 2.690
-3.730 -3.470 -3.240 -3.050 -2.890
2.070 2.020 1.980 1.930 1.900
-1.27 -1.08 -0.84 -0.64 -0.46
W AV <---
MHz
R
jX
R
jX
E L EN
Frequency
Z Source
Z Load
0. 2
Data Sheet
4 of 9
Rev. 03, 2009-11-11
0.2
0 .1
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Reference Circuit
0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R6 5.1K V C4 0.1F R5 2K V
R7 10 V C5 10F 35V R8 5.1K V C6 4.7F C7 0.1F C8 62pF C12 62pF C13 2.2F C14 10F 50V
L1 VDD C15 0.1F C16 10F 50V
l4
l6
C9 62pF J1
R9 10 V
DUT
C22 3.3pF
C24 62pF
l1
l2
l3
C10 3.9pF
l5
C11 6.2pF
l8
l9
l10
C23 3.3pF L2
l11
l12
J2
l7
C17 62pF
C18 2.2F
C19 10F 50V
C20 0.1F
C21 10F 50V
Reference circuit schematic for = 770 MHz Circuit Assembly Information DUT PTFA071701E or PTFA071701F PCB 0.76 mm [.030"] thick, r = 3.48 Microstrip l1 l2 l3 l4 l5 l6, l7 l8 l9 (taper) l10 (taper) l11 l12 Data Sheet Electrical Characteristics at 770 MHz 0.025 0.053 0.035 0.148 0.094 0.103 0.139 0.062 0.002 0.005 0.016 , 50.7 , 38.4 , 38.4 , 76.7 , 7.8 , 44.5 , 8.4 , 8.4 / 33.8 , 33.8 / 38.4 , 38.4 , 50.7 5 of 9 LDMOS Transistor Rogers RO4350 Dimensions: L x W ( mm) 5.84 x 1.65 12.32 x 2.54 8.00 x 2.54 35.94 x 0.76 20.32 x 17.78 24.13 x 2.03 29.97 x 16.51 13.46 x 16.51 / 3.05 0.51 x 3.05 / 2.54 1.27 x 2.54 3.76 x 1.65
1 oz. copper Dimensions: L x W (in.) 0.230 0.485 0.315 1.415 0.800 0.950 1.180 0.530 0.020 0.050 0.148 x 0.065 x 0.100 x 0.100 x 0.030 x 0.700 x 0.080 x 0.650 x 0.650 / 0.120 x 0.120 / 0.100 x 0.100 x 0.065
Rev. 03, 2009-11-11
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C3 C2 C8 R6 R4 C5 R5 QQ 1 R3 C4 R9
R1 C1 L1 Q1 R2 C12 C13 C14 C15 C16 C22 C24
C7 C6
R7 R8
RF_IN
C9 C10 C11 C21 C17 C18 C19 C20 L2 C23
RF_OUT
a071701 ghl - v 1_cd _4- 15 - 09
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 6 of 9
P/N or Comment
PCC1772CT-ND PCC104BCT-ND PCS3475CT-ND 399-1655-2-ND 100B 620 100B 3R9 100B 7R5 920C 202 TPSE106K050R0400 100B 3R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND Rev. 03, 2009-11-11
C1, C2, C3 Capacitor, 0.001 F C4, C7, C15, C20 Capacitor, 0.1 F C6 Capacitor, 4.7 F, 16 V C5 Tantalum capacitor, 10 F, 35 V C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF C10 Ceramic capacitor, 3.9 pF C11 Ceramic capacitor, 6.2 pF C13, C18 Capacitor, 2.2 F C14, C16, C19, C21 Tantalum capacitor, 10 F, 50 V C22, C23 Ceramic capacitor, 3.3 pF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage regulator R1 Chip resistor, 1.2k R2 Chip resistor, 1.3k R3, R5 Chip resistor, 2k R4 Potentiometer, 2k R6, R8 Chip resistor, 5.1k R7, R9 Chip resistor, 10 *Gerber files for this circuit available on request Data Sheet
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36248-2
45 X 2.720 [45 X .107]
C L
D S
FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] .370+0.004 19.4310.510 -0.006 [.7650.020]
4.8260.510 [.1900.020]
[
]
C L
G
2X R1.626 [R.064] 4X R1.524 [R.060]
2X 12.700 [.500] 27.940 [1.100] SPH 1.575 [.062]
1.016 [.040]
19.8120.200 [.7800.008]
3.6320.380 0.0381 [.0015] -AC L
C66065-A2322-C001-01-0027_h-36248-2_11-11-09
34.036 [1.340]
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [0.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.
Data Sheet
7 of 9
Rev. 03, 2009-11-11
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37248-2
[45 X .107] 4X R0.508+.381 -.127 R.020+0.015 -0.005
4.8260.510 [.1900.020]
D
[
]
FLANGE 9.779 [.385]
LID 9.398+0.100 -0.150 .370+0.004 -0.006
[
]
19.4310.510 [.7650.020]
G
2X 12.700 [.500]
SPH 1.575 [.062]
19.8120.200 [.7800.008] 1.016 [.040]
0.0381 [.0015] -AC L
C66065-A2323-C001-01-0027_h-37248-2_11-11-09
3.6320.380 [.1430.015]
S
20.574 [.810]
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [0.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 03, 2009-11-11
PTFA071701E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-11-11 Previous Version: 2009-09-09, Preliminary Data Sheet Page All 2 7,8 Subjects (major changes since last revision) Data Sheet now relects released-product specifications Updated maximun ratings Updated package outline
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
Edition 2009-11-11 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03, 2009-11-11

▲Up To Search▲

Price & Availability of PTFA071701E

	To Download PTFA071701E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .